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24 March 2015 1-μm-pumped OPO based on orientation-patterned GaP
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Orientation patterned gallium phosphide (OP-GaP) is a new nonlinear optical (NLO) crystal which exhibits the highest nonlinear coefficient (d14=70.6 pm/V) and the longest infrared cut-off (12.5 μm) of any quasi-phase-matched (QPM) material that can be pumped at 1-μm without significant two-photon absorption. Here we report the first 1064nm-pumped OPO based on bulk OP-GaP. Multi-grating OP-GaP QPM structures were grown by producing an inverted GaP layer by polar-on-nonpolar molecular beam epitaxy (MBE), lithographically patterning, reactive ion etching, and regrowing by MBE to yield templates for subsequent bulk growth by low-pressure hydride vapor phase epitaxy (LP-HVPE). The pump source was a diode-end-pumped Nd:YVO4 monoblock laser with an RTP high-voltage Q-switch (1064 nm, 1W, 10kHz, 3.3 ns) which was linearly polarized along the <100> orientation of the AR-coated 16.5 x 6.3 x 1.1 mm3 OP-GaP crystal (800-μm thick HVPE layer, 20.8 μm grating period only 150 μm thick) mounted on a copper blocked maintained at 20°C by a thermo-electric cooler. The OPO cavity was a linear resonator with 10-cm ROC mirrors coated for DRO operation (85%R at signal, 55%R at idler). The pump 4σ-diameter at the crystal face was 175 μm. The observed OPO signal (idler) threshold was 533 mW (508 mW) with a slope efficiency of 4% (1%) and maximum output power 15 mW (4 mW). The signal (1342 nm) and idler (4624 nm) output wavelengths agreed well with sellemier predictions. Orange parasitic output at 601.7nm corresponded to 9th order QPM sum frequency mixing of the 1064-nm pump and the 1385-nm signal.
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Leonard A. Pomeranz, Peter G. Schunemann, Daniel J. Magarrell, John C. McCarthy, Kevin T. Zawilski, and David E Zelmon "1-μm-pumped OPO based on orientation-patterned GaP", Proc. SPIE 9347, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 93470K (24 March 2015);

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