Paper
27 February 2015 Surface characterization studies of orientation patterned ZnSe doped with Cr2+
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Abstract
ZnSe doped with Cr2+ was analyzed by EDS, XPS and Micro-Raman spectroscopy techniques. EDS and XPS analysis revealed that chromium concentration is more than 2% and there are additional impurities, Ga, Ti, and Ta. EDS measurements did not reveal any variation in chromium concentration when a line scan was performed over a 200 μm distance. XPS analysis indicated that the sample surface is inhomogeneous. Photoluminescence was acquired by exciting the sample with 325 nm laser beam. Photoluminescence revealed charge transfer bands. Micro-Raman study revealed the LO, TO and 2TA modes at 252, 205 and 140 cm-1. Under 488 or 514.5 nm excitation background luminescence was predominant due to excitation of Cr2+ electrons into the conduction band. However, 632.8 nm laser excitation revealed, strong Raman signals. Raman data were acquired by exciting the sample on the grain boundary and inside the domain. The ratio of LO and TO peak intensities changed randomly when data were acquired from different points on the grain boundary indicating the presence of random strain in the material. When Raman data were acquired from different points on the sample surface for comparison, it revealed that the LO mode was distorted as well as broadened whereas the TO mode intensity increased. This was due to the presence of local modes induced by the sample inhomogeneity and the interaction of the holes with the LO mode.
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B. Rami Reddy, Kenneth Schepler, Elizabeth Moore, John Hoelscher, Shiva Vangala, Bruce Claflin, Narsingh B. Singh, Jonathan Evans, and Patrick Berry "Surface characterization studies of orientation patterned ZnSe doped with Cr2+", Proc. SPIE 9347, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 93471M (27 February 2015); https://doi.org/10.1117/12.2076075
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KEYWORDS
Raman spectroscopy

Chromium

Luminescence

Electrons

Statistical analysis

Crystals

Ions

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