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1 April 2015 High-power external cavity CW red laser diode
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An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong Joo Song, Jun Ho Lee, Jiyeon Park, Jong Hwan Park, Hong Man Na, and Jung Ho Park "High-power external cavity CW red laser diode", Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480R (1 April 2015);


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