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4 March 2015 Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband
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Abstract
Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.
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A. Sirbu, A. Rantamaki, V. Iakovlev, A. Mereuta, A. Caliman, N. Volet, J. Lyytikäinen, O. Okhotnikov, and E. Kapon "Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband", Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934907 (4 March 2015); https://doi.org/10.1117/12.2079752
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