4 March 2015 Towards high power flip-chip long-wavelength semiconductor disk lasers
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Abstract
Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3–1.6 μm are also discussed.
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A. Rantamaki, E. Saarinen, J. Lyytikäinen, J. Kontio, J. Heikkinen, Kimmo Lahtonen, M. Valden, O. Okhotnikov, "Towards high power flip-chip long-wavelength semiconductor disk lasers", Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934908 (4 March 2015); doi: 10.1117/12.2076795; https://doi.org/10.1117/12.2076795
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