4 March 2015 Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition
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Abstract
Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500o C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.
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Mu-Gong Tsai, Mu-Gong Tsai, Chia-Chuan Chen, Chia-Chuan Chen, You-jyun Chen, You-jyun Chen, In-Gann Chen, In-Gann Chen, Xiaoding Qi, Xiaoding Qi, Jung-Chun C. A. Huang, Jung-Chun C. A. Huang, Cen-Ying Lin, Cen-Ying Lin, Chung-Wei Cheng, Chung-Wei Cheng, } "Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition", Proc. SPIE 9350, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX, 935019 (4 March 2015); doi: 10.1117/12.2076554; https://doi.org/10.1117/12.2076554
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