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12 March 2015 Enhancing direct laser patterning of Si wafers by polystyrene films
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Interferential irradiation of high power laser pulses can produce arrays of periodic nanostructures on surfaces. Patterning Si wafers directly by high power laser pulses indicates that the trench depth is limited to the laser pulse intensity. We present our recent studies on direct laser patterning of polystyrene coated Si wafers, which are irradiated interferentially by high power laser pulses. Polystyrene films were formed on silicon wafers with thickness controlled based on a previously developed method. Interferential irradiations of laser pulses are applied on the polystyrene coated Si wafer. The laser pulse intensities are varied along with other interferential parameters such as interference angle and laser wavelengths of 532, 355, and 266nm. The polystyrene film is dissolved to expose the patterned Si surfaces. Atomic force microscopy (AFM) images from the patterned Si surfaces indicate that the area covered with the films has trenches deeper than those on bare Si wafers patterned at the same laser intensity. Furthermore, studies of AFM images indicate that the thicker the polystyrene coating, the deeper the trenches that are produced by direct laser patterning Si surfaces. The enhancement and modification due to polymer films may enhance the security features by improving the quality of holograms.
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Anahita Haghi Zadeh, Haeyeon Yang, Jacob B. Peterson, and Jon J. Kellar "Enhancing direct laser patterning of Si wafers by polystyrene films", Proc. SPIE 9351, Laser-based Micro- and Nanoprocessing IX, 93510V (12 March 2015);

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