16 March 2015 AlGaInN laser diode technology for free-space telecom applications
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Abstract
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defense and oil and gas industries.
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S. P. Najda, S. P. Najda, P. Perlin, P. Perlin, T. Suski, T. Suski, L. Marona, L. Marona, M. Boćkowski, M. Boćkowski, M. Leszczyński, M. Leszczyński, P. Wisniewski, P. Wisniewski, R. Czernecki, R. Czernecki, R. Kucharski, R. Kucharski, G. Targowski, G. Targowski, S. Watson, S. Watson, A. E. Kelly, A. E. Kelly, M. A. Watson, M. A. Watson, P. Blanchard, P. Blanchard, H. White, H. White, } "AlGaInN laser diode technology for free-space telecom applications", Proc. SPIE 9354, Free-Space Laser Communication and Atmospheric Propagation XXVII, 93540Q (16 March 2015); doi: 10.1117/12.2077459; https://doi.org/10.1117/12.2077459
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