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16 March 2015 Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser
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Abstract
Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum. Such strong alloy band edge N-localized-states can locally capture carriers, thus lasing directly occurs from them, leading to dualwavelength emission.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao Sun and Qingjiang Chang "Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570D (16 March 2015); https://doi.org/10.1117/12.2077646
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