Modeling nipi solar cells under concentration accounting for state filling effects

Michael A. Slocum; David V. Forbes; Seth M. Hubbard

doi:10.1117/12.2081039

16 March 2015 Modeling nipi solar cells under concentration accounting for state filling effects

Michael A. Slocum, David V. Forbes, Seth M. Hubbard

Author Affiliations +

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93580K (2015) https://doi.org/10.1117/12.2081039
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Significant development work has been completed in recent years to improve experimental results reaching a record efficiency of 9.14% under one sun AM0 conditions with no anti-reflection coating. The nipi solar cell utilizes epitaxial regrowth contacts to ensure carrier selective contacts to the alternating n and p-type doped layers, forming selectively ohmic and rectifying contacts. Defects or traps formed in the rectifying contact during the epitaxial regrowth process result in injected current that contributes directly to dark current. As a result detailed characterization of the epitaxial regrowth interface is required to understand and minimize the formation of interface traps. Concentration measurements have been completed to characterize the trap states impact on efficiency as higher concentration results in state filling and a recovery in open circuit voltage. A model has been developed to gain further understanding of the measurements under concentration.

Citation Download Citation

Michael A. Slocum, Michael A. Slocum, David V. Forbes, David V. Forbes, Seth M. Hubbard, Seth M. Hubbard, "Modeling nipi solar cells under concentration accounting for state filling effects", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580K (16 March 2015); doi: 10.1117/12.2081039; https://doi.org/10.1117/12.2081039

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