Evidence of hot carriers at elevated temperatures in InAs/AlAsSb quantum wells

J. Tang; Vincent R. Whiteside; H. Esmaielpour; S. Vijeyaragunathan; T. D. Mishima; M. B. Santos; I. R. Sellers

doi:10.1117/12.2079591

16 March 2015 Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells

J. Tang, Vincent R. Whiteside, H. Esmaielpour, S. Vijeyaragunathan, T. D. Mishima, M. B. Santos, I. R. Sellers

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93580Z (2015) https://doi.org/10.1117/12.2079591
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

InAs/AlAs_0.84Sb_0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show evidence of carrier localization. Evidence of for the presence of hot carriers is provided through the broadening of the high-energy tail in PL with increasing excitation power. Moreover, with increasing temperature, the stability of the hot carriers appears to improve despite the increased contribution of phonons at elevated temperatures. This is attributed to the reduced radiative recombination rate driven by the type-II band offset inherent in this system; which is suggested to result in inhibited hot carrier relaxation through electron pile-up in the conduction band

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J. Tang, Vincent R. Whiteside, H. Esmaielpour, S. Vijeyaragunathan, T. D. Mishima, M. B. Santos, and I. R. Sellers "Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580Z (16 March 2015); https://doi.org/10.1117/12.2079591

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