16 March 2015 Raman gain of SiC as a potential medium for Raman lasers
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Proceedings Volume 9359, Optical Components and Materials XII; 935904 (2015) https://doi.org/10.1117/12.2077299
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We have investigated stimulated Raman scattering in the 4H polytype of SiC, due to its excellent thermal conductivity which is of great importance for power scaling of Raman lasers. Spectroscopy verifies the sample’s polytype and precludes any significant admixture of other polytypes. Tests indicate the moderate optical quality of this commercially available sample. Using pump-probe measurements around 1030 nm, we find the Raman gain coefficient of the major peak at 777 cm-1 to be 0.46 cm/GW. Although this value is only modest, calculations and experience with other Raman materials indicate that Raman lasing of 4H SiC should be possible with reasonable intensities of 1064-nm pulsed pumping.
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Larry D. Merkle, Jun Zhang, Graham Allen, Jay W. Dawson, Mark Dubinskii, "Raman gain of SiC as a potential medium for Raman lasers", Proc. SPIE 9359, Optical Components and Materials XII, 935904 (16 March 2015); doi: 10.1117/12.2077299; https://doi.org/10.1117/12.2077299
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