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13 March 2015 Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93632B (2015) https://doi.org/10.1117/12.2077946
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fang-Ming Chen, Jih-Yuan Chang, Yen-Kuang Kuo, Bing-Cheng Lin, and Hao-Chung Kuo "Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632B (13 March 2015); https://doi.org/10.1117/12.2077946
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