Ammonothermal growth of polar and non-polar bulk GaN crystal

Yutaka Mikawa; Takayuki Ishinabe; Shinichiro Kawabata; Tae Mochizuki; Atsuhiko Kojima; Yuji Kagamitani; Hideo Fujisawa

doi:10.1117/12.2078137

13 March 2015 Ammonothermal growth of polar and non-polar bulk GaN crystal

Yutaka Mikawa, Takayuki Ishinabe, Shinichiro Kawabata, Tae Mochizuki, Atsuhiko Kojima, Yuji Kagamitani, Hideo Fujisawa

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 936302 (2015) https://doi.org/10.1117/12.2078137
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

SCAAT^TMhas been developed as a novel ammonothermal method which enables to obtain strain free, high quality and large size bulk gallium nitride (GaN) crystals under high pressure and high temperature super-critical ammonia. One of the unique features of this technique is relatively high growth rate of more than a few hundred micrometers per day toward polar and non-polar axis with excellent crystalline quality. The morphology, X-ray rocking curve, etch pit density and electric properties are presented.

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Yutaka Mikawa, Takayuki Ishinabe, Shinichiro Kawabata, Tae Mochizuki, Atsuhiko Kojima, Yuji Kagamitani, and Hideo Fujisawa "Ammonothermal growth of polar and non-polar bulk GaN crystal", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936302 (13 March 2015); https://doi.org/10.1117/12.2078137

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