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13 March 2015 Homoepitaxial HVPE GaN growth on non- and semi-polar seeds
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630F (2015) https://doi.org/10.1117/12.2077929
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
In this article homoepitaxial HVPE-GaN growth in directions other than [0001] is described. Three crystallization runs on (11-20), (10-10), (20-21), and (20-2-1) seeds were performed. In each experiment a different carrier gas was used: N2, H2, and a 50% mixture of N2 and H2. Other conditions remained constant. An influence of the growth direction and carrier gas on growth rate and properties (morphology, structural quality, and free carrier concentration determined by Raman spectroscopy) of obtained crystals was investigated and discussed in details. For all crystallographic directions a lower growth rate was determined with hydrogen used as the carrier gas. Also, the highest level of dopants was observed for crystals grown under hydrogen. A possibility to obtain highly conductive GaN layers of high quality without an intentional doping is demonstrated.
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M. Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, M. Iwinska, J. L. Weyher, E. Grzanka, P. Krupczynska, A. Khachapuridze, I. Grzegory, and M. Bockowski "Homoepitaxial HVPE GaN growth on non- and semi-polar seeds", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630F (13 March 2015); https://doi.org/10.1117/12.2077929
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