Study of interface state trap density on characteristics of MOS-HEMT

Ming-Chun Tseng; Ming-Hsien Hung; Dong-Sing Wuu; Ray-Hua Horng

doi:10.1117/12.2076678

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13 March 2015 Study of interface state trap density on characteristics of MOS-HEMT

Ming-Chun Tseng, Ming-Hsien Hung, Dong-Sing Wuu, Ray-Hua Horng

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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630M (2015) https://doi.org/10.1117/12.2076678
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al₂O₃/u-GaN/AlN buffer/ Si substrate and Al₂O₃ (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl₃ plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al₂O₃ was grown on the treated surface to reduce the interface state trap densities (D_it). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (V_bk), on-resistance (R_on), threshold voltage (V_th) and drain current (I_d) of MOS-HEMT. The V_th of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl₃ plasma and organic solvents clean treatment shows the lowest V_th of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

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Ming-Chun Tseng, Ming-Hsien Hung, Dong-Sing Wuu, and Ray-Hua Horng "Study of interface state trap density on characteristics of MOS-HEMT", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630M (13 March 2015); https://doi.org/10.1117/12.2076678

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