13 March 2015 Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630U (2015) https://doi.org/10.1117/12.2074898
Event: SPIE OPTO, 2015, San Francisco, California, United States
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nanodisks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
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Snežana Lazić, Snežana Lazić, Ekaterina Chernysheva, Ekaterina Chernysheva, Žarko Gačević, Žarko Gačević, Noemi García-Lepetit, Noemi García-Lepetit, Herko P. van der Meulen, Herko P. van der Meulen, Marcus Müller, Marcus Müller, Frank Bertram, Frank Bertram, Peter Veit, Peter Veit, Jürgen Christen, Jürgen Christen, Almudena Torres-Pardo, Almudena Torres-Pardo, José M. González Calbet, José M. González Calbet, Enrique Calleja, Enrique Calleja, José M. Calleja, José M. Calleja, "Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630U (13 March 2015); doi: 10.1117/12.2074898; https://doi.org/10.1117/12.2074898

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