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13 March 2015 Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 936311 (2015) https://doi.org/10.1117/12.2077806
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is “normally-on” or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro’s and con’s as well as their critical process steps.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, and Stefaan Decoutere "Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936311 (13 March 2015); https://doi.org/10.1117/12.2077806
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