13 March 2015 Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 936314 (2015) https://doi.org/10.1117/12.2079586
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i) the use of Fe-doping may lead to a significant current collapse, due to the presence of a trap with activation energy Ea=0.6eV. We discuss the properties of this trap and its physical origin; (ii) high C-doping levels may favor dynamic Ron increase, due to the presence of a trap level located at Ev+0.84 eV. The effect of this trap can be significantly reduced through the use of a double heterostructure.
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M. Meneghini, M. Meneghini, D. Bisi, D. Bisi, I. Rossetto, I. Rossetto, Carlo De Santi, Carlo De Santi, Antonio Stocco, Antonio Stocco, O. Hilt, O. Hilt, E. Bahat-Treidel, E. Bahat-Treidel, J. Wuerfl, J. Wuerfl, F. Rampazzo, F. Rampazzo, G. Meneghesso, G. Meneghesso, E. Zanoni, E. Zanoni, } "Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936314 (13 March 2015); doi: 10.1117/12.2079586; https://doi.org/10.1117/12.2079586
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