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13 March 2015 Advances in single mode and high power AlGaInN laser diode technology for systems applications
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631A (2015) https://doi.org/10.1117/12.2076268
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen P. Najda, Piotr Perlin, Tadek Suski, Lujca Marona, Michal Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Julita Smalc-Koziorowska, Szymon Stanczyk, Scott Watson, and Antony E. Kelly "Advances in single mode and high power AlGaInN laser diode technology for systems applications", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631A (13 March 2015); https://doi.org/10.1117/12.2076268
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