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13 March 2015 Progress of high-power deep-ultraviolet LEDs
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631L (2015)
Event: SPIE OPTO, 2015, San Francisco, California, United States
High output power deep-ultraviolet light-emitting diodes (LEDs) are reported. First, two series devices were operated at a forward current of 350 mA. We measured powers of 45.2, 93.3, and 65.8 mW for 255, 280, and 310-nm LEDs, respectively. Next, single-chip devices with a modified epitaxial structure and electrode pattern were evaluated. Peak wavelengths, output powers, forward voltages, and external quantum efficiencies were respectively 258.0 nm, 34.8 mW, 8.25 V, 2.07% for the 255-nm LED, 282.8 nm, 40.5 mW, 5.69 V, 2.64% for the 280-nm LED, and 312.3 nm, 40.1 mW, 6.36 V, 2.89% for the 310-nm LED. The 70% lifetime of the 280-nm LED was estimated to be over 3000 h at a junction temperature of 45°C.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Fujioka, K. Asada, H. Yamada, T. Ohtsuka, T. Ogawa, T. Kosugi, D. Kishikawa, and T. Mukai "Progress of high-power deep-ultraviolet LEDs", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631L (13 March 2015); doi: 10.1117/12.2078620;


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