13 March 2015 High-efficiency UV LEDs on sapphire
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631M (2015) https://doi.org/10.1117/12.2079874
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We discuss factors affecting the external quantum efficiency, droop and reliability of AlGaN deep ultraviolet (DUV) light emitting diodes (LED) grown on sapphire substrates. Improvement of LED performance is achieved by suppression of the nonradiative recombination in epitaxial structures with dislocation density reduced to below 5x108 cm-2, transparent LED structure design and optimized UV encapsulation for enhanced light extraction. Relatively low light extraction efficiency remains to be a key factor limiting LED output power and quantum efficiency.
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Max Shatalov, Max Shatalov, Rakesh Jain, Rakesh Jain, Alex Dobrinsky, Alex Dobrinsky, Wenhong Sun, Wenhong Sun, Yuri Bilenko, Yuri Bilenko, Jinwei Yang, Jinwei Yang, Michael Shur, Michael Shur, Remis Gaska, Remis Gaska, } "High-efficiency UV LEDs on sapphire", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631M (13 March 2015); doi: 10.1117/12.2079874; https://doi.org/10.1117/12.2079874
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