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13 March 2015 Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631Q (2015) https://doi.org/10.1117/12.2078122
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We invesstagated the relationship between the emission efficiency of InGaN/GaN multiple quantum wells (MQWs) and the V-shape pits (V-pits) forming along the threading dislocation (TD). The thinner InGaN/GaN MQWs on the side walls around V-pits would create higher local energy barriers, which can resist the carriers trapped into the non-radiative recombination centres within TDs. By inserting different InGaN/GaN superlattice (SLS) layers below the MQWs, sizes of V-pits could be properly controlled. It was found that the V-pit size on InGaN MQWs increased with increasing SLS layers, which could decrease energy barriers. On the contrary, the shorter distance between the TD center and V-pit boundary would increase the carrier capturing capability of TDs in smaller V-pits. By properly controlling the V-shape defect formation, the best internal quantum efficiency of about 70%f was found in the MQWs with underlying 15 periods SLS layers.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chiao-Yun Chang, Heng Li, and Tien-Chang Lu "Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631Q (13 March 2015); https://doi.org/10.1117/12.2078122
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