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13 March 2015 Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631R (2015) https://doi.org/10.1117/12.2078803
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
The efficiency droop in nitride LEDs is currently attributed to either carrier-density-dependent nonradiative recombination or to carrier leakage, both being discussed in terms of a single-particle picture. Our time-resolved photoluminescence results show that the radiative lifetime is independent of carrier density, while the nonradiative lifetime scales with the inverse of the carrier density. This can not be understood in a single-particle model. By means of a many-particle theory approach we obtain a consistent picture with both radiative and Auger recombination enhanced by excitonic electron-hole correlation. In the high carrier density limit single-particle radiative and Auger recombination are recovered.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Hangleiter, Torsten Langer, Marina Gerhard, Dimitry Kalincev, A. Kruse, Heiko Bremers, U. Rossow, and M. Koch "Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631R (13 March 2015); https://doi.org/10.1117/12.2078803
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