Semi/non-polar nitride quantum wells for high-efficient light emitters

Mitsuru Funato; Yoichi Kawakami

doi:10.1117/12.2078873

13 March 2015 Semi/non-polar nitride quantum wells for high-efficient light emitters

Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631T (2015) https://doi.org/10.1117/12.2078873
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We describe the optical properties of semi/non-polar InGaN and AlGaN quantum wells. In semipolar (11¯22) InGaN QWs, spatially uniform but spectrally broad emissions are observed. This finding is interpreted with consideration of the exciton migration length shortened by the fast radiative recombination lifetime due to the reduced electric field. Non/semipolar AlGaN QWs are also fabricated. In the semipolar (1¯102) AlGaN QWs, the radiative recombination lifetimes faster than that in the (0001) QW are confirmed experimentally. As a consequence, much stronger emission is achieved from the semipolar AlGaN QWs at room temperature

Citation Download Citation

Mitsuru Funato and Yoichi Kawakami "Semi/non-polar nitride quantum wells for high-efficient light emitters", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631T (13 March 2015); https://doi.org/10.1117/12.2078873

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