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13 March 2015 Spatial variations of optical properties of semipolar InGaN quantum wells
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631U (2015)
Event: SPIE OPTO, 2015, San Francisco, California, United States
Spatial variations of band potentials and properties of carrier recombination were examined in semipolar (2021) plane InGaN/GaN single quantum wells by scanning near-field photoluminescence (PL) spectroscopy. The quantum wells had In content from 0.11 to 0.36 and were emitting from violet to yellow-green. Near-field scans showed small PL peak energy and linewidth variations with standard deviations below 10 meV, which confirms small alloy composition variations in the quantum wells. The scans revealed large, ~5 to 10 μm size areas of similar PL parameter values, as opposed to 100 nm scale variations, often reported for InGaN wells. With increased excitation power, an untypical photoluminescence peak energy shift to lower energies was observed. The shift was attributed to density dependent carrier redistribution between nm-scale sites of different potentials. The experimental results show that in the (2021) plane InGaN quantum wells the localization potentials are shallow and the recombination properties are spatially rather uniform, which confirms the high potential of these QWs for photonic applications.
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Saulius Marcinkevičius, Kristina Gelžinytė, Ruslan Ivanov, Yuji Zhao, Shuji Nakamura, Steven P. DenBaars, and James S. Speck "Spatial variations of optical properties of semipolar InGaN quantum wells", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631U (13 March 2015);

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