27 April 2015 InGaN LEDs prepared on β-Ga2O3 (-201) substrates
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631Z (2015) https://doi.org/10.1117/12.2076114
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We fabricated InGaN LEDs prepared on β-Ga2O3 (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga2O3 (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×108 cm-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm2. The light output power did not saturate at 1000 A/cm2. This device characteristic indicates the great potential of Ga2O3 for use in high-power LEDs.
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Kazuyuki Iizuka, Yoshikatsu Morishima, Akito Kuramata, Yu-Jiun Shen, Chang-Yu Tsai, Ying-Yong Su, Gavin Liu, Ta-Cheng Hsu, J. H. Yeh, "InGaN LEDs prepared on β-Ga2O3 (-201) substrates", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631Z (27 April 2015); doi: 10.1117/12.2076114; https://doi.org/10.1117/12.2076114
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