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13 March 2015 Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93632H (2015) https://doi.org/10.1117/12.2078970
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
In InGaN/GaN blue light-emitting diodes (LEDs) widely utilized for general lighting, there exist various material issues that lead to the unwanted nonradiative recombination. In this paper, we utilize various characterization techniques to investigate the nonradiative recombination mechanisms in LED devices. With the characterization techniques such as temperature-dependent external quantum efficiency, current-voltage, and electroluminescence spectra, we show that different nonradiative recombination processes such as the Shockley-Read-Hall recombination and the defect-assisted tunneling can play roles in the LED devices. Information on the dominant nonradiative recombination obtained by these analyses can be used for further improving the quantum efficiency of the device.
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Dong-Soo Shin, Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyun-Sung Kim, Kyu-Sang Kim, and Jong-In Shim "Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632H (13 March 2015); https://doi.org/10.1117/12.2078970
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