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13 March 2015 The impact of time-varying phosphorus doping on ZnMgO thin films and achievement of dominant acceptor-bound-exciton peak
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Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93640U (2015) https://doi.org/10.1117/12.2079186
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
ZnO is a highly efficient and promising semiconductor material because of its large bandgap (3.37 eV) and exciton binding energy (60 meV). MgO also has a very high bandgap (7.8 eV), and the incorporation of Mg into ZnO can result in an alloy with a bandgap of more than 4 eV . We used plasma immersion ion implantation to dope phosphorus into Zn0.85Mg0.15O for achieving p-type ZnMgO. RF sputtering was used to deposit ZnMgO on a Si substrate. Phosphorus doping was conducted from 10 s to 70 s. Rapid thermal annealing of the samples was performed to remove any implantation defects. A highly dominant acceptor-bound-exciton peak was observed at 3.36 eV by photoluminescence measurements, which continued to dominate from low temperature to room temperature. Donor-bound acceptor and free-electron acceptor peaks were also observed at 3.24 eV and 3.28 eV, respectively.
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Shantanu Saha, S. Nagar, S. K. Gupta, and S. Chakrabarti "The impact of time-varying phosphorus doping on ZnMgO thin films and achievement of dominant acceptor-bound-exciton peak", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93640U (13 March 2015); https://doi.org/10.1117/12.2079186
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