13 March 2015 ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
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Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93641H (2015) https://doi.org/10.1117/12.2179728
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We review in this paper the application of ZnO/(Zn,Mg)O quantum wells to the photodetection of the polarization state of UV light. This photodetection is achieved by using the natural anisotropy that exists in non-polar ZnO/(Zn,Mg)O quantum wells, which separates the excitonic absorption from the three valence bands to the conduction band depending on the incident light polarization. The device structures covered here consist of Schottky photodiodes on a- and m-plane orientations, grown by molecular beam epitaxy on ZnO or sapphire substrates, and are analyzed as a function of the incident light polarization.
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A. Hierro, A. Hierro, G. Tabares, G. Tabares, M. Lopez-Ponce, M. Lopez-Ponce, E. Muñoz, E. Muñoz, A. Kurtz, A. Kurtz, B. Vinter, B. Vinter, J. M. Chauveau, J. M. Chauveau, } "ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641H (13 March 2015); doi: 10.1117/12.2179728; https://doi.org/10.1117/12.2179728
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