13 March 2015 Ternary and quaternary wurtzite-type oxide semiconductors: new materials and their properties
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Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93641L (2015) https://doi.org/10.1117/12.2175570
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
β-NaFeO2 structure is an orthorhombic wurtzite-derived structure, of which the structural relationship with wurtzite structure is similar to that of the chalcopyrite sturcture with zincblende structure. β-LiGaO2, β-AgGaO2 and β-AgAlO2 are known as materials possessing the β-NaFeO2 structure; however, studies on the wurtzite-derived ternary oxide semiconductors are quite limited. Recently, we demonstrated the band gap engineering of zinc oxide by alloying with wurtzite-type β-AgGaO2, and the band gap of ZnO was reduced to 2.55 eV by this alloying. Very recently, a new wurtzite-type ternary compound, β-CuGaO2, was found out. Its energy band gap was 1.47 eV, and it exhibited p-type conduction. The first principle calculation indicated that β-CuGaO2 is a direct semiconductor; therefore it is suitable to use in optoelectronic devices. Taking the 1.47 eV of the band gap and p-type electronic conduction into account, β- CuGaO2 is a promising material for the thin film solar cell absorber. These new ternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.
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T. Omata, T. Omata, "Ternary and quaternary wurtzite-type oxide semiconductors: new materials and their properties", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641L (13 March 2015); doi: 10.1117/12.2175570; https://doi.org/10.1117/12.2175570
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