18 March 2015 Design, fabrication and demonstration of heterogeneously III-V/Si laser with a compact optical vertical interconnect access
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Abstract
A new heterogeneously integrated III-V/Si laser structure is reported in this letter, which consists of a III-V ridge waveguide gain section on silicon, III-V/Si optical vertical interconnect accesses (VIAs) and silicon-oninsulator (SOI) nanophotonic waveguide sections. The III-V semiconductor layers are introduced on top of the 300 nm thick SOI layer through low temperature, plasma assisted direct wafer-bonding and etched to form III-V ridge waveguide on silicon as the gain section. The optical VIA is formed by tapering the III-V and the beneath SOI in the same direction with a length of 50 μm for efficient coupling of light down to the 600 nm wide silicon nanophotonic waveguide or vice versa. Fabrication details and specification characterizations of this heterogeneous III-V/Si Fabry–Pérot (FP) laser are given. The fabricated FP laser shows a continuous-wave lasing with a threshold current of 65 mA at room temperature and the slope efficiency from single facet is 144 mW/A. The maximal single facet emitting power is about 4.5 mW at a current of 100 mA and the side-mode suppression ratio is ~30 dB. This new heterogeneously integrated III-V/Si laser structure demonstrated enables more complex laser configuration with a sub-system on-chip for various applications.
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Jing Pu, Jing Pu, Doris Keh Ting Ng, Doris Keh Ting Ng, Kim Peng Lim, Kim Peng Lim, Vivek Krishnamurthy, Vivek Krishnamurthy, Chee Wei Lee, Chee Wei Lee, Kun Tang, Kun Tang, Anthony, Yew Seng Kay, Anthony, Yew Seng Kay, Ter Hoe Loh, Ter Hoe Loh, Qian Wang, Qian Wang, } "Design, fabrication and demonstration of heterogeneously III-V/Si laser with a compact optical vertical interconnect access", Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660G (18 March 2015); doi: 10.1117/12.2086929; https://doi.org/10.1117/12.2086929
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