27 February 2015 IIIV/Si hybrid integrated devices for optical interconnect
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Abstract
We discuss our view of the on-chip optical interconnect infrastructure for future multi-core processers based on wavelength-division-multiplexing (WDM) and our recent results on some key devices for such structures. Cascading performance of various wavelength multiplexers and de-multiplexers including arrayed waveguide gratings (AWGs) and echelle gratings based on the silicon-on-insulator platform are discussed and compared. IIIV based electro-absorption (EA) modulators on silicon realized through benzocyclobutene (BCB) adhesive bonding are analyzed. Ultra short adiabatic taper based mode converters between passive and active structures are designed. The integration of multichannel modulators, detectors and wavelength de-multiplexers is realized.
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Kaixuan Chen, Kaixuan Chen, Yuntao Zhu, Yuntao Zhu, Jianxin Cheng, Jianxin Cheng, Qiangsheng Huang, Qiangsheng Huang, Xin Fu, Xin Fu, Jianhao Zhang, Jianhao Zhang, Yaocheng Shi, Yaocheng Shi, Jin Liu, Jin Liu, Günther Roelkens, Günther Roelkens, Liu Liu, Liu Liu, } "IIIV/Si hybrid integrated devices for optical interconnect", Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660I (27 February 2015); doi: 10.1117/12.2085682; https://doi.org/10.1117/12.2085682
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