Epitaxial growth of luminescent β-FeSi2 on modified Si(111) surface by silver

Kensuke Akiyama; Hiroshi Funakubo

doi:10.1117/12.2079405

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27 February 2015 Epitaxial growth of luminescent β-FeSi₂ on modified Si(111) surface by silver

Kensuke Akiyama; Hiroshi Funakubo

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Proceedings Volume 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII; 93660R (2015) https://doi.org/10.1117/12.2079405
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates. These epitaxial β-FeSi₂ films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The full width at half maximum of the rocking curve of β-FeSi₂ 202/220 was 0.19o for the films deposited at 760oC on the Si(111) substrates with 85 nm-thick silver layer. The transmission electron microscope analysis indicated the flat and steep β-FeSi₂/Si interface. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films was larger than that of the directly grown β-FeSi₂ films on the Si(111) without silver layer, indicating the decreasing of the density of nonradiative recombination centers in β-FeSi₂ film.

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Kensuke Akiyama and Hiroshi Funakubo "Epitaxial growth of luminescent β-FeSi₂ on modified Si(111) surface by silver", Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660R (27 February 2015); https://doi.org/10.1117/12.2079405

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