27 February 2015 Epitaxial growth of luminescent β-FeSi2 on modified Si(111) surface by silver
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Abstract
Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates. These epitaxial β-FeSi2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The full width at half maximum of the rocking curve of β-FeSi2 202/220 was 0.19o for the films deposited at 760oC on the Si(111) substrates with 85 nm-thick silver layer. The transmission electron microscope analysis indicated the flat and steep β-FeSi2/Si interface. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films was larger than that of the directly grown β-FeSi2 films on the Si(111) without silver layer, indicating the decreasing of the density of nonradiative recombination centers in β-FeSi2 film.
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Kensuke Akiyama, Kensuke Akiyama, Hiroshi Funakubo, Hiroshi Funakubo, } "Epitaxial growth of luminescent β-FeSi2 on modified Si(111) surface by silver", Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660R (27 February 2015); doi: 10.1117/12.2079405; https://doi.org/10.1117/12.2079405
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