Front Matter Vol. 9367
Proc. SPIE 9367, Front Matter: Volume 9367, 936701(17 April 2015);doi: 10.1117/12.2190472
Waveguide-based Devices I
Proc. SPIE 9367, Fabrication error tolerant SOI WDM device using bidirectional angled multimode interferometers, 936704(27 February 2015);doi: 10.1117/12.2076824
Proc. SPIE 9367, Improved performance of a silicon arrayed waveguide grating by reduction of higher order mode generation near the boundary of a star coupler, 936705(27 February 2015);doi: 10.1117/12.2077408
Proc. SPIE 9367, Architectures for evanescent frequency tuning of microring resonators in micro-opto-electro-mechanical SOI platforms, 936706(27 February 2015);doi: 10.1117/12.2080638
Waveguide-based Devices II
Proc. SPIE 9367, Feedback and control in integrated optics enabled by contactLess integrated photonic probe, 936707(27 February 2015);doi: 10.1117/12.2082786
Proc. SPIE 9367, Suspended silicon slotted microring resonators with ultra-high optical quality, 936708(27 February 2015);doi: 10.1117/12.2079307
Proc. SPIE 9367, Low-loss delay lines with small footprint on a micron-scale SOI platform, 93670A(27 February 2015);doi: 10.1117/12.2079560
Proc. SPIE 9367, Total internal reflection mirrors with ultra-low losses in 3 µm thick SOI waveguides, 93670B(27 February 2015);doi: 10.1117/12.2079748
Modulators I
Proc. SPIE 9367, Design and characterisation of high-speed monolithic silicon modulators for digital coherent communication, 93670C(27 February 2015);doi: 10.1117/12.2078080
Proc. SPIE 9367, Power-efficient carrier-depletion SOI Mach-Zehnder modulators for 4x25Gbit/s operation in the O-band, 93670D(27 February 2015);doi: 10.1117/12.2078364
Proc. SPIE 9367, Strain tuning of germanium bandgap by selective epitaxial growth for electro-absorption modulators, 93670E(27 February 2015);doi: 10.1117/12.2080449
Proc. SPIE 9367, Accurate modelling and simulation of silicon optical modulators in QPSK, 93670F(27 February 2015);doi: 10.1117/12.2075293
Proc. SPIE 9367, Silicon photonics cloud (SiCloud), 93670G(27 February 2015);doi: 10.1117/12.2077331
Slow-Light Modulators I
Proc. SPIE 9367, Modulation efficiency enhancement of an optical phase modulator using one dimensional photonic crystal structures, 93670I(27 February 2015);doi: 10.1117/12.2077160
Proc. SPIE 9367, 25 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetector and CMOS amplifier circuit for optical interconnects, 93670K(27 February 2015);doi: 10.1117/12.2077449
Proc. SPIE 9367, A hybrid photonic-electronic switching architecture for next generation datacenters, 93670L(27 February 2015);doi: 10.1117/12.2177686
Slow-Light Modulators II
Proc. SPIE 9367, Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems, 93670M(3 April 2015);doi: 10.1117/12.2084604
Proc. SPIE 9367, Photonic-electronic integration with polysilicon photonics in bulk CMOS, 93670N(3 April 2015);doi: 10.1117/12.2175462
Proc. SPIE 9367, Interferometric microscopy of silicon photonic devices, 93670O(27 February 2015);doi: 10.1117/12.2077267
Proc. SPIE 9367, Hybrid silicon mode-locked laser with improved RF power by impedance matching, 93670P(27 February 2015);doi: 10.1117/12.2080117
MIR Silicon Photonics and GeSn Devices
Proc. SPIE 9367, Si based GeSn light emitter: mid-infrared devices in Si photonics, 93670R(27 February 2015);doi: 10.1117/12.2077778
Proc. SPIE 9367, Temperature-dependent study of Si-based GeSn photoconductors, 93670S(27 February 2015);doi: 10.1117/12.2079580
Proc. SPIE 9367, Integrated photonic crystal waveguides on silicon-on-sapphire for chemical sensing in mid-infrared, 93670T(27 February 2015);doi: 10.1117/12.2080266
Lab-on-a-Chip, Optofluidics, and Sensing
Proc. SPIE 9367, Silicon-PDMS optofluidic integration, 936718(27 February 2015);doi: 10.1117/12.2080859
Proc. SPIE 9367, 4H-SiC detectors for ultraviolet light monitoring, 93671B(27 February 2015);doi: 10.1117/12.2076702
PICs for Optical Interconnects: Joint Session with Conferences 9367 and 9368
Proc. SPIE 9367, Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform, 93670V(27 February 2015);doi: 10.1117/12.2076262
Proc. SPIE 9367, Mode-converting coupler for silicon-on-sapphire devices, 93670W(27 February 2015);doi: 10.1117/12.2079671
Proc. SPIE 9367, Topology-optimized silicon photonic wire mode (de)multiplexer, 93670X(27 February 2015);doi: 10.1117/12.2078732
Proc. SPIE 9367, 25 Gbps silicon photonics multi-mode fiber link with highly alignment tolerant vertically illuminated germanium photodiode, 93670Y(27 February 2015);doi: 10.1117/12.2076010
Proc. SPIE 9367, Silicon-based tunable optical delay lines and switches for next generation optical telecommunications, 93670Z(27 February 2015);doi: 10.1117/12.2083276
Device Coupling Approaches for Silicon Photonics Chips: Joint Session with Conferences 9367 and 9368
Proc. SPIE 9367, Si-wire grating couplers for integrated optical transceivers based on single-mode fiber connection, 936710(27 February 2015);doi: 10.1117/12.2078699
Proc. SPIE 9367, Low back-reflection CMOS-compatible grating coupler for perfectly vertical coupling, 936711(27 February 2015);doi: 10.1117/12.2077960
Proc. SPIE 9367, Mode conversion based on the acousto-optical interaction in photonic-phononic waveguide, 936712(27 February 2015);doi: 10.1117/12.2076505
Waveguide-based Devices III
Proc. SPIE 9367, Comparison of different types of MMI-resonators fabricated on a micron-scale SOI platform, 936713(27 February 2015);doi: 10.1117/12.2079606
Proc. SPIE 9367, Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications, 936714(27 February 2015);doi: 10.1117/12.2079393
Proc. SPIE 9367, Silicon photonics athermal Mach-Zehnder interferometer with wide thermal and spectral operating range, 936715(27 February 2015);doi: 10.1117/12.2079966
Proc. SPIE 9367, Bending behavior of a flexible single crystal nanomembrane photonic crystal cavity, 936716(28 February 2015);doi: 10.1117/12.2080381
Proc. SPIE 9367, Compact 4X4 1250GHz silicon arrayed waveguide grating router for optical interconnects, 936717(27 February 2015);doi: 10.1117/12.2078047
Light Emission and Detection
Proc. SPIE 9367, Photoluminescence quenching effect by Si cap in n+ Ge on Si, 93671E(3 April 2015);doi: 10.1117/12.2078593
Proc. SPIE 9367, Comparison of large photovoltaic power plants with conventional ones and prospects for photovoltaic plants use in Israel, 93671F(27 February 2015);doi: 10.1117/12.2082649
Proc. SPIE 9367, GeSn waveguide structures for efficient light detection and emission, 93671G(27 February 2015);doi: 10.1117/12.2078675
Proc. SPIE 9367, Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers, 93671H(27 February 2015);doi: 10.1117/12.2080816
Proc. SPIE 9367, Ultra-low-cost near-infrared photodetectors on silicon, 93671I(27 February 2015);doi: 10.1117/12.2078913
Poster Session
Proc. SPIE 9367, High-quality slot waveguide ring resonator based on atomic layer deposition, 93671J(27 February 2015);doi: 10.1117/12.2076903
Proc. SPIE 9367, Toward new design-rule-check of silicon photonics for automated layout physical verifications, 93671K(27 February 2015);doi: 10.1117/12.2078357
Proc. SPIE 9367, Induced strain in silicon waveguides and couplers, 93671L(27 February 2015);doi: 10.1117/12.2078383
Proc. SPIE 9367, Solar cell enhancement using metallic nanoparticles embedded in titanium dioxide, 93671O(10 April 2015);doi: 10.1117/12.2080077
Proc. SPIE 9367, Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon, 93671P(27 February 2015);doi: 10.1117/12.2080146
Plenary Session 9367
Proc. SPIE 9367, Silicon integrated nanophotonics: from fundamental science to manufacturable technology (Presentation Video), 93671X(23 April 2015);doi: 10.1117/12.2197116
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