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27 February 2015 Strain tuning of germanium bandgap by selective epitaxial growth for electro-absorption modulators
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Proceedings Volume 9367, Silicon Photonics X; 93670E (2015) https://doi.org/10.1117/12.2080449
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
The bandgap tuning of sub-micron wide Germanium (Ge) waveguides by selective epitaxial growth (SEG) method with a SiO2 mask has been demonstrated. SEG-grown Ge waveguides on Si substrate are designed to show various compressive strain depending on the growth parameters, such as the width and thickness of Ge waveguides and SiO2 masks. X-Ray Diffraction (XRD) verifies that -0.25% (compressive) strain is induced in a 0.6μm-wide Ge waveguide with SiO2 mask of 20μm width and 1.0μm thickness. The strained Ge waveguide should show the absorption edge wavelength of ~1.55μm. Furthermore, compressive strain can be tuned between -0.03% and -0.25% by changing the lateral structure of the device, which correspond to the absorption edge wavelength of 1.548~1.568μm. It means that only one epitaxial growth with specific lateral design of the electro-absorption modulator can modulate light in the wavelength range.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Mizuno, M. Yako, N. M. Luan, and K. Wada "Strain tuning of germanium bandgap by selective epitaxial growth for electro-absorption modulators", Proc. SPIE 9367, Silicon Photonics X, 93670E (27 February 2015); https://doi.org/10.1117/12.2080449
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