Hybrid silicon mode-locked laser with improved RF power by impedance matching

Bassem Tossoun; Dennis Derickson; Sudharsanan Srinivasan; John Bowers

doi:10.1117/12.2080117

27 February 2015 Hybrid silicon mode-locked laser with improved RF power by impedance matching

Bassem Tossoun, Dennis Derickson, Sudharsanan Srinivasan, John Bowers

Proceedings Volume 9367, Silicon Photonics X; 93670P (2015) https://doi.org/10.1117/12.2080117
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

Citation Download Citation

Bassem Tossoun, Dennis Derickson, Sudharsanan Srinivasan, and John Bowers "Hybrid silicon mode-locked laser with improved RF power by impedance matching", Proc. SPIE 9367, Silicon Photonics X, 93670P (27 February 2015); https://doi.org/10.1117/12.2080117

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KEYWORDS

Mode locking

Semiconductor lasers

Waveguides

Silicon

Hybrid silicon lasers

Diodes

Capacitors

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