27 February 2015 Group IV mid-infrared photonics
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Proceedings Volume 9367, Silicon Photonics X; 93670Q (2015) https://doi.org/10.1117/12.2176219
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 μm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.
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G. Z. Mashanovich, M. Nedeljkovic, J. Soler Penades, C. J. Mitchell, A. Z. Khokhar, C. J. Littlejohns, S. Stankovic, B. Troia, Y. Wang, S. Reynolds, V. M. N. Passaro, L. Shen, N. Healy, A. C. Peacock, C. Alonso-Ramos, A. Ortega-Monux, G. Wanguemert-Perez, I. Molina-Fernandez, D. J. Rowe, J. S. Wilkinson, P. Cheben, J. J. Ackert, A. P. Knights, D. J. Thomson, F. Y. Gardes, "Group IV mid-infrared photonics", Proc. SPIE 9367, Silicon Photonics X, 93670Q (27 February 2015); doi: 10.1117/12.2176219; https://doi.org/10.1117/12.2176219
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