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27 February 2015 Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
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Proceedings Volume 9367, Silicon Photonics X; 936714 (2015) https://doi.org/10.1117/12.2079393
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 µm). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Reboud, Julie Widiez, Jean Michel Hartmann, Guilherme Osvaldo Dias, Daivid Fowler, Alexei Chelnokov, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Vincent Calvo, Richard Geiger, T. Zabel, Jérôme Faist, and Hans Sigg "Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications", Proc. SPIE 9367, Silicon Photonics X, 936714 (27 February 2015); https://doi.org/10.1117/12.2079393
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