3 April 2015 Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser
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Proceedings Volume 9368, Optical Interconnects XV; 93680M (2015) https://doi.org/10.1117/12.2080769
Event: SPIE OPTO, 2015, San Francisco, California, United States
We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.
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J. Müller, J. Müller, J. Hauck, J. Hauck, B. Shen, B. Shen, S. Romero-García, S. Romero-García, E. Islamova, E. Islamova, S. Sharif Azadeh, S. Sharif Azadeh, S. Joshi, S. Joshi, N. Chimot, N. Chimot, A. Moscoso-Mártir, A. Moscoso-Mártir, F. Merget, F. Merget, F. Lelarge, F. Lelarge, J. Witzens, J. Witzens, "Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser", Proc. SPIE 9368, Optical Interconnects XV, 93680M (3 April 2015); doi: 10.1117/12.2080769; https://doi.org/10.1117/12.2080769

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