8 February 2015 Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
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In this work we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77 - 325K temperature range, indicating potential for room temperature operation. The device dark current stays diffusion limited in the 150K-325K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities of D*(λ) = 1x109 (cm Hz0.5/W) at T = 300K and D*(λ) = 5x109 (cm Hz0.5/W) at T = 250K, which is easily achievable with a one stage TE cooler.
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Alexander Soibel, Cory J. Hill, Sam A. Keo, Linda Hoglund, David Z. -Y. Ting, Sarath D. Gunapala, "Room temperature performance of mid-wavelength infrared InAsSb nBn detectors", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93700M (8 February 2015); doi: 10.1117/12.2075771; https://doi.org/10.1117/12.2075771

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