8 February 2015 Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
Author Affiliations +
In this work we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77 - 325K temperature range, indicating potential for room temperature operation. The device dark current stays diffusion limited in the 150K-325K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities of D*(λ) = 1x109 (cm Hz0.5/W) at T = 300K and D*(λ) = 5x109 (cm Hz0.5/W) at T = 250K, which is easily achievable with a one stage TE cooler.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Soibel, Alexander Soibel, Cory J. Hill, Cory J. Hill, Sam A. Keo, Sam A. Keo, Linda Hoglund, Linda Hoglund, David Z. -Y. Ting, David Z. -Y. Ting, Sarath D. Gunapala, Sarath D. Gunapala, "Room temperature performance of mid-wavelength infrared InAsSb nBn detectors", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93700M (8 February 2015); doi: 10.1117/12.2075771; https://doi.org/10.1117/12.2075771

Back to Top