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8 February 2015 Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates
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We show here that n-type InAs/InGaSb superlattices can be electrically isolated from lightly doped n-type GaSb substrates at much higher temperatures than from the more common undoped p-type GaSb substrates without the use of a large band gap insulating buffer layer. Temperature dependent Hall effect measurements show superlattice conduction up to near room temperature, which is significantly higher than the 20 K observed for p-type substrates. Multi-carrier analysis of magnetic field dependent transport data demonstrate the absence of a substrate related conduction channel. We argue that the isolation is due to the depletion layer at the p-n junction between the p-type buffer layer and the n-type substrate.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, and G. J. Brown "Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937038 (8 February 2015);

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