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27 February 2015 Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities
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Proceedings Volume 9372, High Contrast Metastructures IV; 93720C (2015) https://doi.org/10.1117/12.2078577
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence (μ-PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavities show high quality factor (Q) values in the light emission performance which can be up to 4.3×103. Moreover, the degree of polarization (DOP) of the light emission from the nonpolar GaN-based PC defect cavities was measured to achieve around 64 % along the m crystalline direction.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsung Sheng Kao, Tzeng-Tsong Wu, Che-Wei Tsao, Jyun-Hao Lin, Da-wei Lin, Shyh-Jer Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, and Yan-Kuin Su "Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities", Proc. SPIE 9372, High Contrast Metastructures IV, 93720C (27 February 2015); https://doi.org/10.1117/12.2078577
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