27 February 2015 Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
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Proceedings Volume 9372, High Contrast Metastructures IV; 93720U (2015) https://doi.org/10.1117/12.2077090
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG’s influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).
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Sulakshna Kumari, Johan S. Gustavsson, Ruijun Wang, Emanuel P. Haglund, Petter Westbergh, Dorian Sanchez, Erik Haglund, Åsa Haglund, Jörgen Bengtsson, Nicolas Le Thomas, Gunther Roelkens, Anders Larsson, Roel G. Baets, "Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications", Proc. SPIE 9372, High Contrast Metastructures IV, 93720U (27 February 2015); doi: 10.1117/12.2077090; https://doi.org/10.1117/12.2077090
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