27 February 2015 High efficiency AlGaN deep ultraviolet light emitting diodes on silicon
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Abstract
The performance of conventional Al(Ga)N planar devices decays drastically with increasing Al content, leading to low internal quantum efficiencies (IQEs) and high device operation voltages. In this paper, we show that these challenges can be addressed by utilizing epitaxially grown nitrogen polar (N-polar) Al(Ga)N nanowires. With a careful control of the growth conditions, a strong AlN band edge emission at 210 nm can be observed at room temperature, and an IQE of 80% was derived. Furthermore, the Mg incorporation can be drastically enhanced by controlling the growth rate. The hole concentrations of AlN:Mg nanowires were estimated to be on the order of 1016 cm-3, or higher at room temperature. 210 nm emitting AlN nanowire LEDs were achieved, which exhibit excellent electrical performance (at a forward current of 20 mA, the forward bias is about 8 V for a standard 300×300 μm2 device.). This can be ascribed to both efficient Mg doping and N-polarity induced internal electrical field that enhances hole injection. In the end, high performance AlGaN nanowire LEDs were demonstrated. This work provides a practical path for high efficiency DUV light sources with nanotechnology.
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Zetian Mi, Songrui Zhao, Ashfiqua Connie, Mohammad Hadi Tavakoli Dastjerdi, "High efficiency AlGaN deep ultraviolet light emitting diodes on silicon", Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 937306 (27 February 2015); doi: 10.1117/12.2087050; https://doi.org/10.1117/12.2087050
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