Concepts for long wavelength VCSELs above 2 µm

Stephan Sprengel; Markus-Christian Amann

doi:10.1117/12.2083218

4 March 2015 Concepts for long wavelength VCSELs above 2 μm

Stephan Sprengel, Markus-Christian Amann

Proceedings Volume 9381, Vertical-Cavity Surface-Emitting Lasers XIX; 938105 (2015) https://doi.org/10.1117/12.2083218
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We present different concepts for long wavelength buried tunnel junction VCSELs for the spectroscopically important range above 2 μm. This includes GaSb-based laser using GaInAsSb quantum wells, InP-based lasers with V-shaped quantum wells and InP-based lasers using type-II quantum wells. For InP-based devices, emission wavelengths up to 2.36 μm are presented, with single-mode output powers of roughly 500 μW and side-mode suppression ratios of more than 30 dB. GaSb-based VCSELs are presented with single-mode emission at 2.6 μm, a side-mode suppression ratio of more than 20 dB and a peak output power of 400 μW.

Citation Download Citation

Stephan Sprengel and Markus-Christian Amann "Concepts for long wavelength VCSELs above 2 μm", Proc. SPIE 9381, Vertical-Cavity Surface-Emitting Lasers XIX, 938105 (4 March 2015); https://doi.org/10.1117/12.2083218

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