Paper
10 March 2015 III-Nitride high temperature single-photon sources
Pallab Bhattacharya, Saniya Deshpande, Thomas Frost, Arnab Hazari
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 938207 (2015) https://doi.org/10.1117/12.2078001
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Nitride based GaN and InGaN quantum dots are excellent single-photon emitters at high temperature owing to their wide bandgap and large exciton binding energy [1-5]. In this work, two different molecular beam epitaxy (MBE) grown nanostructures have been investigated for single-photon emission: InGaN/GaN disk-in-nanowire and InGaN/GaN self-organized quantum dot. Single-photon emission under both optical and electrical excitation has been observed from a single InGaN quantum contained in a GaN nanowire p-n junction. We demonstrate electrically driven single-photon emission, with a g (2)(0) = 0.35, from a single InGaN quantum dot emitting in the green spectral range (λ=520 nm) up to 125 K. Additionally, a self-organized InGaN/GaN single quantum dot diode was grown and fabricated. Emission from a single quantum dot (λ=620 nm) shows single-photon emission with g(2)(0) = 0.29 at room temperature. On-demand single-photon emission by electrical pumping of the quantum dot at an excitation repetition rate of 200 MHz was demonstrated.
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Pallab Bhattacharya, Saniya Deshpande, Thomas Frost, and Arnab Hazari "III-Nitride high temperature single-photon sources", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 938207 (10 March 2015); https://doi.org/10.1117/12.2078001
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Cited by 4 scholarly publications.
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KEYWORDS
Excitons

Quantum dots

Nanowires

Diodes

Gallium nitride

Indium gallium nitride

Electroluminescence

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