10 March 2015 Effects of temperature and difference-wavelength on mode stability in Dual-λ QD lasers
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820J (2015) https://doi.org/10.1117/12.2085511
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We employ a device which exploits the properties of InP quantum dots (QD), (emitting from 650-730 nm), to produce simultaneous dual-λ lasing from a single ridge-waveguide comprising two sections. Due to the effects of state-filling in an inhomogeneously broadened QD ensemble, the wavelength is strongly dependent on magnitude of the gain (or cavity loss). Therefore, by altering the loss of each section of the device we are able to demonstrate a large range of difference-wavelengths, up to 63 nm. Here, we test the performance of the device and measure effects of temperature and difference-wavelength on the stability of the two lasing modes.
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Samuel Shutts, Peter M. Smowton, Andrey B. Krysa, "Effects of temperature and difference-wavelength on mode stability in Dual-λ QD lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820J (10 March 2015); doi: 10.1117/12.2085511; https://doi.org/10.1117/12.2085511
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