A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon

E. Stark; T. Frost; S. Jahangir; A. Hazari; S. Deshpande; P. Bhattacharya

doi:10.1117/12.2078262

10 March 2015 A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon

E. Stark, T. Frost, S. Jahangir, A. Hazari, S. Deshpande, P. Bhattacharya

Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820R (2015) https://doi.org/10.1117/12.2078262
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by J_th = 1.76 kA/cm² (green) and 2.94kA/cm² (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.

Citation Download Citation

E. Stark, T. Frost, S. Jahangir, A. Hazari, S. Deshpande, and P. Bhattacharya "A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820R (10 March 2015); https://doi.org/10.1117/12.2078262

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